Date: October 20, 2009 -
Time: 4:00 pm -

Stanford University
APPLIED PHYSICS/PHYSICS COLLOQUIUM

Tuesday, October 20, 2009
4:15 p.m. on campus in Hewlett Teaching Center, Rm. 201
Refreshments in the Physics Lobby at 4:00 p.m.

Harold Y. Hwang
Dept. of Advanced Materials & Dept. of Applied Physics, University of Tokyo

"Atomic Engineering Oxide Heterointerfaces"

Complex oxides are fascinating systems which host a vast array of unique phenomena, such as high temperature (and unconventional) superconductivity, "colossal" magnetoresistance, all forms of magnetism and ferroelectricity, as well as (quantum) phase transitions and couplings between these states. In recent years, there has been a mini-revolution in our ability to grow thin film heterostructures of these materials with atomic precision. With this level of control, a number of new electronic phases have been discovered at their interfaces. Between two insulators, for example, metallic, superconducting, and magnetic states can be induced. In analogy to the rich science and technology that emerged from the development of semiconductor heterostructures, we are using these techniques to create novel low-dimensional states inaccessible in bulk oxides.